Researchers at the University of Surrey have made significant progress in addressing the temperature instability issue that has hindered the widespread adoption of source-gated transistors (SGTs). By incorporating thin layers of insulating material at the source contact, the team has developed a new transistor design using the semiconductor material IGZO (indium-gallium-zinc oxide). This innovation enhances the temperature stability of SGTs while retaining their advantages, such as low power consumption, high signal amplification, and reliability under diverse conditions. SGTs hold promise for large-area electronics applications and can revolutionize fields like medicine and computing.
Source: 10.1109/TED.2023.3276337
